unisonic technologies co., ltd 30N20 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd ver.a 30a, 200v n-channel power mosfet ? description the utc 30N20 is an n-channel mode power fet, it uses utc?s advanced technology. this technology allows a minimum on-state resistance, superior swit ching performance. it also can withstand high energy pulse in the avalanche and commutation mode. ? features * r ds(on) <75m ? @ v gs =10v,i d =15a * low gate charge (typical 60nc) * high switching speed ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 30N20l-tf2-t 30N20g-tf2-t to-220f2 g d s tube note: pin assignment: g: gate d: drain s: source www.datasheet.net/ datasheet pdf - http://www..co.kr/
30N20 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw ver.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 200 v gate-source voltage v gss 30 v continuous i d 30 a drain current pulsed i dm 124 a avalanche current i ar 30 a single pulsed e as 640 mj avalanche energy repetitive e ar 18 mj power dissipation p d 42 w junction temperature t j +150 c storage temperature range t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 200 v drain-source leakage current i dss v ds =200v 1 a forward v gs =+30v, v ds =0v +100 na gate-source leakage current reverse i gss v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) i d =250a 3 5 v static drain-source on-state resistance r ds(on) v gs =10v, i d =15a 75 m ? dynamic parameters input capacitance c iss 2400 3100 pf output capacitance c oss 430 560 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1mhz 55 70 pf switching parameters total gate charge q g 60 78 nc gate to source charge q gs 17 nc gate to drain charge q gd v dd =50v, v gs =10v , i d =1.3a 27 nc turn-on delay time t d(on) 40 ns rise time t r 280 ns turn-off delay time t d(off) 125 ns fall-time t f v dd =30v, i d =0.5a, r g =25 ? , v gs =0~10v 115 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 30 a maximum body-diode pulsed current i sm 124 a drain-source diode forward voltage v sd i s =30a, v gs =0v 1.5 v www.datasheet.net/ datasheet pdf - http://www..co.kr/
30N20 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw ver.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. www.datasheet.net/ datasheet pdf - http://www..co.kr/
|
